Abstract
We investigated the effect of device parameters on intermediate-frequency (IF) output power in sub-harmonic mixing by an anti-parallel diode pair based on Fermi-level managed barrier (FMB) diodes. The IF output power peaked as the local oscillator (LO) power increased due to the saturation of the FMB diode itself. The peak IF output power was found to increase as barrier height increased while it stayed nearly the same as the junction area increased. The lowest noise equivalent power of 4 × 10–19 W Hz−1 was obtained with an LO power of only 160 μW at a signal frequency of 304 GHz.
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