Abstract
Many thin film samples used in the semiconductor industry contain C, N and O. The detection limits and accuracy obtained by Rutherford Backscattering Spectroscopy (RBS) measurement are limited due to the small cross section values. High energy non‐Rutherford backscattering is often used to enhance the sensitivities. But non‐Rutherford cross section values are irregular and can not be calculated as normal Rutherford backscattering values. It is also difficult to find an appropriate energy window that for all these elements, and high‐energy ions are needed. In this paper, the Nuclear Reaction Analysis (NRA) method is used to simultaneously measure C, N and O. several applications in the semiconductor research, development, and manufacturing areas are presented.
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