Abstract
Two types of application of real-time oxygen monitoring on a production-type rapid thermal processor (RTP) are reported. Diagnosing of gas flow dynamics in an RTP chamber is described by using a tracer technique. Deviation from plug flow, which decreases purge efficiency, was observed as a function of gas flow rate. Purge design is performed on the basis of the gas flow dynamics, and the efficiency of several purge patterns was comparatively studied. Monitoring of a typical two-step RTP process for silicidation of Ti or Co was then demonstrated. Both adsorption and desorption were found to take place during annealing. Oxygen desorbs first at lower temperature (during temperature ramp) and then starts to adsorb at higher temperature. A few monolayers of oxygen is adsorbed to Ti during annealing, while less oxygen is adsorbed during Co RTP.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
