Abstract
The discovery of carrier induced ferromagnetism in p-type doped diluted magnetic semiconductors (DMS) with Curie temperatures actually up to 110 K in Ga 1− x Mn x As, as well as the demonstration of high spin injection efficiency observed from II–VI and III–V DMS [1,2] have recently renewed strongly the interest in DMS. In this paper, we present an overview of the recent experiments we have performed on spin injection light emitting diodes using an n-type doped II–VI DMS layer as spin aligner and on p-type doped II–VI magnetic heterostructures: Cd 1− x Mn x Te quantum wells and Zn 1− x Mn x Te epilayers.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
