Abstract
The development of advanced materials frequently requires control over the presence and propertiesof interfaces. In order to establish the relationship between the microstructure and the macroscopic behaviour of the material both, the structure and the composition of the interfaces have to be revealed at a resolution at or close to the atomic level. In this paper new techniques in analytical electron microscopy with high spatial resolution will be discussed. The analysis is based on electron energy-loss spectroscopy (EELS). Spatial resolution can either be obtained by applying an energy filteringTEM (EFTEM) or a small probe in a field emission dedicated STEM. Both techniques have been applied toa number of model systems and the achievable detection and resolution limits will be compared. The experimental studies were performed at (i) a Zeiss EM 912 Omega instrument equipped with a 1024 × 1024 slow scan CCD camera and (ii) a VG HB 501 equipped with parallel EELS.
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