Abstract
Herein, a multi‐component AlCrTaTiZrRu/(AlCrTaTiZrRu)N0.7 double‐layer structure is prepared by direct current (DC) magnetron sputtering as a diffusion barrier for Cu interconnection. To verify the diffusion‐barrier properties at high temperatures, the Cu/AlCrTaTiZrRu/(AlCrTaTiZrRu)N0.7/Si structures are annealed at 700–900 °C for 30 min in high vacuum. The barrier layer remains amorphous with few nanocrystalline structures after annealing at 800 °C. Cu particle agglomeration begins to appear on the surface, but no Cu‐silicide compound is found on the Si substrate, indicating that the layer can effectively defer the interdiffusion of Cu and Si. Under annealing at high temperature of 900 °C, Cu silicides and other intermetallic compounds are formed on the surface of the Cu film, with the film resistivity increasing significantly, indicating that the AlCrTaTiZrRu/(AlCrTaTiZrRu)N0.7 double‐layer structures have completely failed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
