Applications of GaAs grade-period doping superlattice for negative-differential-resistance device

Abstract

The characteristics of a GaAs graded-period (delta) -doped superlattice grown by molecular beam epitaxy were studied. It is shown that a novel S-shaped negative differential conductivity (NDC) occurred both at 300 K and 77 K. Besides, a two-state avalanche multiplication process, i.e., a middle quasi-stable region is seen at 77 K. Finally, there is an interesting hysteresis phenomenon due to the trapped holes created by the avalanche multiplications. The significant control voltage ratio, Vs/V(Eta) , of the studied structure introduces a good potential for application on the switching field.