Abstract
We present an overview on the EUV/XUV activities of the Laser-Laboratorium Göttingen based on table-top laser-produced plasma (LPP) sources. As target materials, gaseous jets of noble gases or solid Gold are employed. In order to obtain high EUV fluence, a Schwarzschild objective consisting of two spherical mirrors with Mo/Si multilayer coatings is adapted to the source. By demagnified (10x) imaging of the Au plasma, an EUV spot with a maximum energy density of ∼1.3 J/cm2 is generated (3 μm diameter, pulse duration 8.8 ns). First applications of this system reveal its potential for high-resolution modification and direct structuring of solid surfaces. Additionally, an EUV/XUV setup for structural analysis was developed. Using a gas puff target combined with a grazing incidence optics (Kirkpatrick-Baez arrangement), it offers the possibility to perform angular resolved reflectivity, diffraction, and scattering experiments. For chemical analysis of various samples, an NEXAFS setup was built, based on gaseous Krypton as a broadband emitter in the water-window range around the carbon K-edge (4.4 nm). Here, proof-of-principle for NEXAFS with lab-scaled XUV sources is given on polyimide as a reference.
Highlights
The societal demand for ever faster electronic devices requires a change in the manufacturing processes within the few years
We present an overview on the EUV/XUV activities of the Laser-Laboratorium Gottingen based on table-top laser-produced plasma (LPP) sources
Using a gas puff target combined with a grazing incidence optics (Kirkpatrick-Baez arrangement), it offers the possibility to perform angular resolved reflectivity, diffraction, and scattering experiments
Summary
The societal demand for ever faster electronic devices requires a change in the manufacturing processes within the few years. Since the resolution of an optical system is limited by the utilized wavelength, there is no way for further reduction of the structure sizes with common UV lithography. Using reflective imaging optics on the basis of multilayer mirrors, electronic devices with structure sizes well below 45 nm could be manufactured at a wavelength of 13.5 nm. EUV radiation with high average power is required, which can be generated either by laser- or discharge-based plasma sources. Such EUV sources and corresponding beam steering optics are currently being developed with tremendous effort. There are other applications of EUV radiation, which can strongly profit from the EUVL source and optics developments. Main goal of our research is to utilize the unique interaction between EUV/XUV radiation and matter for probing, modifying, and structuring solid surfaces
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