Applications and technological evolution of FinFET in modern technology

Abstract

FinFET technology, hailed as the successor to MOSFETs, has garnered significant attention due to its potential to address the challenges posed by the latter's scaling limitations. However, the adoption of FinFETs is not without its set of obstacles. Key issues, such as constraints imposed by material-induced bandgaps, the intricacies of manufacturing processes, and complications related to fin height, persistently challenge engineers and researchers alike. Notably, the material-induced bandgap limitations can be detrimental to the device's overall performance. The intricacies in manufacturing add layers of complexity to fabrication, making the production process not only meticulous but also expensive. Additionally, the precise control over fin height is crucial, as it has direct implications for device performance and variability. In response to these challenges, innovative solutions are continually being proposed. The advent of multiple gate designs has offered greater control over the device's electrical properties. Additionally, the integration of High-K dielectrics provides an improved gate oxide alternative, addressing the leakage current issues often observed in traditional designs. Moreover, techniques like selective epitaxial silicon growth have been introduced to rectify the external surface, ensuring better consistency and performance. Undoubtedly, these hurdles underscore the importance of relentless research and collaboration in the semiconductor industry. The drive to overcome these challenges not only pushes the boundaries of FinFET technology but also promises enhanced performance, efficiency, and scalability. This continuous evolution will undoubtedly pave the way for more refined and efficient FinFET solutions in the near future.