Applications and challenges of Silicon Carbide (SiC) MOSFET technology in electric vehicle propulsion systems: A review

Abstract

Silicon Carbide (SiC) MOSFET technology plays a pivotal role in the drive systems of electric vehicles (EVs), offering key applications and facing significant challenges. This paper provides an overview of the fundamental principles and characteristics of SiC MOSFETs, highlighting the unique properties of SiC materials. It delves into the critical applications of SiC MOSFETs in electric vehicle drive systems, including motor drives and inverters, and analyzes the advantages of using SiC MOSFETs for efficient energy conversion at high temperatures. The paper also discusses the key challenges faced by SiC MOSFET technology, such as stability issues under high-temperature environments, avalanche breakdown and tolerance issues affecting power supply reliability, and manufacturing cost and consistency issues that limit widespread application. Innovative solutions to these challenges are explored, including strategies for improving stability under high temperatures, techniques for suppressing avalanche effects and enhancing power supply reliability, and innovations in manufacturing processes to reduce costs and improve consistency. The paper concludes by summarizing the crucial role of SiC MOSFET technology in electric vehicle drive systems, emphasizing the importance of innovative solutions to address its challenges, and looking forward to its continued contribution to technological advancements in the field of electric vehicles.