Application of X-ray topography to USSR and Russian space materials science

I L Shul'Pina,I A Prokhorov,Yu A Serebryakov,I Zh Bezbakh

doi:10.1107/s2052252516003730

I L Shul'Pina, I A Prokhorov + Show 2 more

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https://doi.org/10.1107/s2052252516003730

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Abstract

The authors' experience of the application of X-ray diffraction imaging in carrying out space technological experiments on semiconductor crystal growth for the former USSR and for Russia is reported, from the Apollo-Soyuz programme (1975) up to the present day. X-ray topography was applied to examine defects in crystals in order to obtain information on the crystallization conditions and also on their changes under the influence of factors of orbital flight in space vehicles. The data obtained have promoted a deeper understanding of the conditions and mechanisms of crystallization under both microgravity and terrestrial conditions, and have enabled the elaboration of terrestrial methods of highly perfect crystal growth. The use of X-ray topography in space materials science has enriched its methods in the field of digital image processing of growth striations and expanded its possibilities in investigating the inhomogeneity of crystals.

Highlights

X-ray diffraction imaging (XRDI) is the effective conventional method for investigating the real structure of crystals
XRDI was used in the investigation of crystals of Ge–Si–Sb solid solutions obtained in the course of the preflight preparation, orbital flight and imitating experiments which were carried out according to the Soviet part of the experimental Apollo–Soyuz program (1975) (Zemskov et al, 1977; Ivanov et al, 1979)
The crystals were grown by three variations of the Bridgman method: with the crystal oriented horizontally, so the force of gravity is directed perpendicular to the direction of crystallization, and with the ingot oriented upright and the hot zone either below or above, so the force of gravity is directed parallel or antiparallel to the direction of crystallization

Summary

Introduction

X-ray diffraction imaging (XRDI) is the effective conventional method for investigating the real structure of crystals In modern understanding, it is associated with Lang’s work (Lang, 1957, 1959), which was published in response to the necessity of investigating the real structures of semiconductor crystals, the growth of which began at that time as an industrial method. The importance of the problem of semiconductor crystal growth with high macro- and microhomogeneity of structure and properties stimulated intensive investigations into the processes responsible for the formation of concentration heterogeneities within them (Wang et al, 2004). These investigations became an important part of technological experiments in space on semiconductor crystal growth.

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