Abstract

The effect of iron(III) p-toluenesulfonate hexahydrate (Fe(PTS) 3) concentration on the formation and patternability of poly(3,4ethylenedioxythiophene) (PEDOT) films on (3-aminopropyl)trimethoxysilane (APS) monolayer was investigated. Low deposition rate yielded highly conductive and very smooth PEDOT films. However, the spin-coated oxidants in low Fe(PTS) 3 concentrations were susceptible to moistures, leading to the poorly patterned PEDOT films. Increasing Fe(PTS) 3 concentration enabled the fine patterning of the films. The fabricated thin film transistors with PEDOT electrodes formed on 30 wt.% Fe(PTS) 3 revealed the saturation mobility of 0.16 cm 2/V s and subthreshold slope of 0.5 V/decade. The obtained low contact resistance was 12 kΩ cm, possibly due to the negligible interface morphological discontinuity at the pentacene-PEDOT interface.

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