Abstract
Cu interconnects have been used extensively in ULSI devices. However, large resistance‐capacitance delay and poor device reliability have been critical issues as the device feature size has reduced to nanometer scale. In order to achieve low resistance and high reliability of Cu interconnects, we have applied a thin Ti‐based self‐formed barrier (SFB) using Cu(Ti) alloy seed to 45nm‐node dual damascene interconnects and evaluated its performance. The line resistance and via resistance decreased significantly, compared with those of conventional Ta/TaN barriers. The stress migration performance was also drastically improved using the SFB process. A performance of time dependent dielectric breakdown revealed superior endurance. These results suggest that the Ti‐based SFB process is one of the most promising candidates for advanced Cu interconnects. TEM and X‐ray photoelectron spectroscopy observations for characterization of the Ti‐based SFB structure were also performed. The Ti‐based SFB consisted of mainly amorphous Ti oxides. Amorphous or crystalline Ti compounds such as TiC, TiN, and TiSi formed beneath Cu alloy films, and the formation varied with dielectric.
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