Abstract

Characteristics of electrochemically-driven light-emitting devices M/MEH-PPV+TBATS/ITO (where M=Al, Cu, Au and TBATS=tetrabutylammonium p-toluenesulfonate) are reported. Light emission is observed in forward and reverse bias modes in each device. Characteristics of “3-layer”, “4-layer” and “5-layer” light-emitting devices having the configurations, Al/MEH-PPV/TTO, Al/MEH-PPV/EB/TTO and Al/EB/MEH-PPV/EB/TTO have been studied. Light emission is observed in forward bias only for the first device but in forward and reverse bias modes for the latter two devices. Operation in AC mode is also observed. Photovoltages are observed for all these devices in the range 0.15–0.87 v when irradiated with Ar + laser or overhead projector lamp

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