Application of the statistical moment method to thermodynamic quantities ofsilicon

Abstract

The lattice constants, thermal expansion coefficients, specific heats at constant volume and those at constantpressure, Cv and Cp, second cumulants, and Lindemann ratio are derived analytically for diamond cubicsemiconductors, using the statistical moment method. The calculated thermodynamicquantities of the Si crystal are in good agreement with the experimental results. We alsofind the characteristic negative thermal expansion in the Si crystal at low temperatures.