Thermodynamic Properties of Semiconductors with Defects

Vu Van Hung,Le Dai Thanh

doi:10.4236/msa.2011.29166

Abstract

Thermodynamic properties of diamond cubic and zinc-blende semiconductors with point defects are considered by the statistical moment method (SMM). The thermal expansion coefficient, the specific heats at constant volume and those at constant pressure, CV and CP, and the isothermal compressibility are derived analytically for semiconductors with defects. The SMM calculated thermodynamic quantities of the Si, and GaAs semiconductors with defects are in good agreement with the experimental results.

Highlights

There has been a great interested in the study of bulk semiconductor, semiconductor heterostructures and nanodevices [1,2,3,4] since they provide us a wide variety of academic problems as well as the technological applications
Thermodynamic properties of diamond cubic and zinc-blende semiconductors with point defects are considered by the statistical moment method (SMM)
The SMM calculated thermodynamic quantities of the Si, and GaAs semiconductors with defects are in good agreement with the experimental results

Summary

Introduction

There has been a great interested in the study of bulk semiconductor, semiconductor heterostructures and nanodevices [1,2,3,4] since they provide us a wide variety of academic problems as well as the technological applications. The point defects in semiconductors including the vacancies play an important role in many properties of material Understanding these defects will lead to improved semiconductor devices for the technological applications. One can study the melting of solids and phase transitions in Si using first-principles molecular-dynamics method [8,9]. Such calculations are computationally expensive and, currently, simulations can only be run for periods of tens of picoseconds, which is not long enough for some of the processes of interest. The purpose of the present article is to investigate the temperature dependence of the thermodynamic properties of the semiconductors with defects using the analytic statistical moment method (SMM) [12,13,14,15,16]. The thermodynamic quantities are derived from the Helmholtz fnee energy of semiconductors with defects

Atomic Displacements of Semiconductor

Thermodynamic Properties of Semiconductors with Defects

T u0 4

Results and Discussion

Conclusions