Abstract
The results of research of the electrophysical and frequency characteristics of the semiconductor structure of a Schottky diode based on gallium arsenide are presented. The diode structure was modelled in the Sentaurus TCAD software package. A comparison of the current-voltage characteristics obtained by mathematical modeling and by experiment are presented. The frequency response in the range of 115-257 GHz is shown. The use of a Schottky diode as a continuous terahertz radiation detector is shown.
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