Application Of The Sah-noyce-shockley Recombination Mechanism To The Model Of The Voltagecurrent Relationship Of Led Structures With Quantum Wells

Abstract

The Sah-Noyce-Shockley (SNS) space charge region recombination theory is applied to build the mathematic model of the voltage-current relationships (VCR) of light emitting diodes with quantum wells. Unlike the mathematic model of VCR, for SNS in the proposed model, non-uniformity of recombination centres distribution over the space charge region and dependence of their mean concentration on voltage are assumed as well as the fact that the nonideality factor of forward current dependence on bias voltage may have a continuous series of values from 1 to 5 and is defined by the dependence on bias voltage of both saturation current and exponent of the VCR mathematical model.