Abstract
This paper reports a new model of current versus voltage for light emitting devices with a quantum well. These devices include light emitting diodes (LEDs) and laser diodes (LDs). In LED or LD operation, nearly all electrons and holes are injected into the quantum well and recombine there. As a result, the forward current consists of mainly the recombination current. This is in contrast to the popular Sah-Noyce-Shockley (SNS) diode equation where the dominating current is the diffusion current. The SNS model assumes that recombination in the depletion region is negligible under typical forward bias condition. This is opposite to what actually happens in LEDs or LDs with quantum wells. However, SNS equation has been used directly to describe LEDs and LDs with quantum wells for several decades probably because of its simplicity. Another probably reason is that there is no other I-V model available. In this study, I-V curves calculated using the new model agree well with results measured on GaN/sapphire LEDs with InGaN quantum wells. In the calculation, junction temperature T<sub>j</sub> rather than case temperature T<sub>c</sub> is used to achieve better agreement.
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