Abstract
This paper contains results of the comprehensive studies of the effect of the isotropic etching mode on roughening of the nanocomposite materials and on smoothing of the roughed nanostructure made of homogeneous materials. Three-dimensional simulation results obtained illustrate the influence of the isotropic etch process on dynamics of the roughening and smoothing of the surfaces, indicating the opposite effects of the same etch process on the surfaces made of different materials. It was shown that root mean square roughness obeys simple scaling laws during both roughening and smoothing processes. The exponential time dependences of the rms roughness have been determined.
Highlights
The surface evolution induced by the ion-bombardment has been subjects of a numerous experimental and theoretical studies in recent years
In this paper we have demonstrated applications of the level set method in performing three-dimensional simulations of the surface topology evolution
The obtained simulation results indicate that the isotropic etch process has different influences on the surface composed of different materials
Summary
The surface evolution induced by the ion-bombardment has been subjects of a numerous experimental and theoretical studies in recent years. It was found that the ion sputtering represents one of the crucial processes in producing various nanostructured surfaces or interfaces in nanotechnology [1]-[3]. Ion beambased finishing technologies are very important for the surface shape corrections and low-energy ion beams can be beneficially used to tailor the microscopic surface roughness of solid surfaces on a micron and sub-micron scales [4]-[6]. How to cite this paper: Radjenović, B. and Radmilović-Radjenović, M. (2014) Application of the Level Set Method in Three-Dimensional Simulation of the Roughening and Smoothing of Substrates in Nanotechnologies. World Journal of Nano Science and Engineering, 4, 84-89.
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