Application of TCAD to designing advanced DRAM and logic devices

Abstract

Typical aspects of applying TCAD to designing advanced DRAM and logic devices are presented focusing on transistors. For prediction at the start of developing new devices, global models which fit marginally to varieties of transistors are used. After preliminary experiments of the new devices, model parameters are best fit to the experimental results using local parameter extractions. These local models are used for process optimization of the devices under development. Response surface models are extensively used with additional information of weighted optimization and statistical analysis. Fast and compact contributions to circuit design are promised by response surfaces of SPICE parameters. A new concept of response surface chains (RSC) is introduced to make the best use of simulated results. Support of TCAD tools to this concept is a key technology for concurrent and real-time development of the advanced devices.