Abstract
A novel single-pulse charge pumping (SPCP) method was proposed and implemented to profile the density of states (DOSs) in metal–oxide–semiconductor thin-film transistors (TFTs). The proposed SPCP method was demonstrated in characterizing the DOS below the conduction band of indium gallium zinc oxide TFTs. The DOSs, including oxygen vacancy donorlike states and band tail states, were characterized successfully with high resolution. This method has all the advantages of the conventional CP method and single-pulse characterization.
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