Abstract
ABSTRACTA new application of selective area metalorganic vapour phase epitaxy is demonstrated: fabrication of distributed feedback (DFB) gratings with sub-micron period and modulated coupling coefficient Kc. A SiO2 mask layer defines the InGaAs(P) grating pattern as well as the lateral variation in growth rate and, hence, thickness of the grating. In this way K can be varied along the laser cavity in a controlled and reproducible manner.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
