Abstract
Neon ions are implanted into niobium single crystal and their depth profile is determined employing 20Ne(p, γ) 21Na resonant nuclear reactions. The projected ranges obtained experimentally are close to the calculated mean depth of energy deposition. This implies the trapping of Ne atoms by radiation induced defects during implantation. The angular dependence for the backscattered protons and nhe nuclear reaction induced γ-rays is studied in Ne implanted niobium single crystal, and it is shown that a part of the implants occupies the octahedral interstice in niobium. The Ar + ion irradiation effect on the Ne atom distribution is recognized by reversing the sequence of the Ar + irradiation-Ne + irradiation. This effect is attributed to the radiation enhanced diffusion of Ne atoms under irradiation.
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