Abstract
In this paper a new technique for controlling lattice temperature is proposed. The main idea in the proposed structure is using three buried layers in the device. These layers are top buried oxide, down buried oxide and buried silicon. In this structure, the buried silicon is located between two insulator layers. The proposed structure which is called as Inserted silicon layer in buried oxide of the SOI-MOSFET (ISB-SOI) is simulated with two-dimensional ATLAS simulator. It is shown higher thermal conductivity of silicon than silicon-dioxide reduces maximum lattice temperature and self-heating effects in the nano-scale MOSFETs. Moreover, effective mobility, off current and sub-threshold swing improve in the proposed structure in comparison to Conventional SOI-MOSFET (C-SOI).
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