Abstract
A new selfaligned AlGaAs/GaAs heterojunction bipolar transistor (HBT) fabrication process is presented, featuring a deep wet etching that undercuts the base and the emitter interconnects, and forms micro-airbridges for device isolation. The advantages of this isolation process include critical lithographies on flat surfaces, capacitance reduction, and compatibility with thick collector layers. 1-5×10 μm 2 HBT devices, grown by MOCVD, exhibit an F max of 120 GHz
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
