Abstract
The active layer of metal oxide semiconductor thin film transistor (MOS-TFT) prepared by solution method, with the advantages of being a low cost and simple preparation process, usually needs heat treatment to improve its performance. Laser treatment has the advantages of high energy, fast speed, less damage to the substrate and controllable treatment area, which is more suitable for flexible and large-scale roll-to-roll preparation than thermal treatment. This paper mainly introduces the basic principle of active layer thin films prepared by laser treatment solution, including laser photochemical cracking of metastable bonds, laser thermal effect, photoactivation effect and laser sintering of nanoparticles. In addition, the application of laser treatment in the regulation of MOS-TFT performance is also described, including the effects of laser energy density, treatment atmosphere, laser wavelength and other factors on the performance of active layer thin films and MOS-TFT devices. Finally, the problems and future development trends of laser treatment technology in the application of metal oxide semiconductor thin films prepared by solution method and MOS-TFT are summarized.
Highlights
Published: 30 November 2021At present, new display technology products are endlessly emerging
Laser treatment is a top-down treatment technology and the treatment position a new treatment technology in the fieldarea of flexible, and devices, can beAsaccurately controlled, so the treatment can be printing limited to a wearable specific range of laser treatment effectively avoidsand thethe shortcomings of other treatmentcan methods, such as in-plane and thickness direction, thin films and nanostructures be selectively high energy consumption, long processing time, high process temperature, incompatibiltreated to improve the properties of thin films and without affecting the subity with flexible substrate, only the whole device being treatable without the active layer strate and adjacent materials [43,45,46,47]
Laser treatment in air has the advantages of low cost, simple process and more suitable for large-area manufacturing, but the moisture and oxygen in air will affect the properties of the film [40,87]
Summary
New display technology products are endlessly emerging. People continue to have higher requirements for the characteristics of display devices, such as high resolution, thin, flexible, transparent, rich color and so on. MOS-TFT has the advantages of high field effect mobility, high uniformity, good electrical stability and high transparency, which is suitable for the future display preparation requirements, such as large size and flexibility [1,4,10]. In the study of solution preparation of MOS-TFT, the active layer is mainly made sol–gel [15,16]prepared or nanoparticles (NPs)[15,16]. Sol–gel or nano-particle method, the precursors or nanostructures usually need postprocessing to improve their preparing metal oxide semiconductor thin films and corresponding devices by solution method, nanostructures need postprocessing improve their propertiesthe [20].precursors.
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