Impact of Boron doping in spin coated ZnO Thin Film Transistors

Abstract

Transparent conductive oxides are developed as a possible replacement for the traditional silicon and organic semiconductors within the field of microelectronics. Transparency property, good carrier mobility and enormous area uniformity makes them appropriate for the applications like transparent light emitting diodes, liquid displays, sensors and X-ray detectors. The optical transparency property in solution processed thin films have opened a replacement horizon for low-cost transparent electronic circuits and devices. Here we report the event of a high performance and operationally stable metal oxide semiconductor thin film Transistors. By sol-gel spin coating method Zinc Oxide doped with Boron is used as the channel layer of the thin film transistor. Structural and optical studies are analyzed to understand the performance of doped Zinc Oxide layer. The electrical properties were also measured using a semiconductor parameter analyzer.