Abstract
Basic mechanisms of modification of materials subjected to irradiation by short (ns-ms), highly intense (105–108W/cm2) plasma or ion pulse beams (HIPIPB) are reviewed. Description of basic phenomena occurring as a result of beam-target interaction, and a representative selection of examples of the HIPIPB processing of semiconductors, metals, ceramics, and other materials described in the literature are given. The HIPIPB processing is compared to the laser processing.
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