Abstract
The escape depth of photoelectrons depends on their kinetic energy. We apply this relationship to measure film thicknesses from X-ray photoelectron spectroscopy (XPS) measurements with tunable-energy synchrotron radiation (SR). For this purpose, a “high-energy SR-XPS” instrument has been constructed and used to characterize thermally oxidized thin films on Si(100) single crystals. In order to observe photoelectrons emitted from deeper regions than with conventional XPS, Si 1s photoelectrons with an energy up to 4000 eV were measured with X-ray energies up to 5800 eV. The oxide thickness was estimated from measurements of the relative Si intensities from the oxide and the substrate at various photon energies. Our results suggest that the SR-XPS system is useful for measuring the thickness of thin films.
Published Version
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