Abstract
The reduction of linewidth roughness (LWR) is considered one of the most critical issues in extreme ultraviolet (EUV) photoresists. A possible solution to the LWR issue is shortening the acid-diffusion length of the photoacid via the optimized application of post-exposure bake (PEB) processes. In this study, the development and feasibility of the flash-lamp (FL) PEB process as a replacement for the commonly used hot-plate PEB process is investigated. The results indicate that, using the FL PEB process, the acid-diffusion length is controllable and lithographic patterning results are obtained. Further detailed analysis is necessary to optimize this technology for lithographic patterning applications. However, the present results show the potential of FL PEB for applications in EUV photoresist processing.
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