Abstract
SUMMARYDirected self‐assembly (DSA) lithography has recently entered the spotlight as one of the most promising new generation lithography candidates, with the potential for fabrication of semiconductor device patterns down to sub‐30 nm. In this report, the latest experimental and simulation results on the contact hole shrinking process using DSA are demonstrated.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
