Abstract
The present study is concerned with diamond-like layers deposited onto semiconductor devices by plasma methods to function as protective coatings. The layers are suitable for this application because of their high resistance to external agents (chemical and mechanical) and good adhesion to silicon. A difficulty, however, arises in the process of selective etching of the layers during the manufacture of semiconductor devices. The paper discusses the advantages and disadvantages of the diamond-like layers when used in the manufacture of two types of power silicon transistor. The electrical properties of the transistors were examined. A technique for manufacturing semiconductor devices protected with diamond-like layers is proposed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
