Abstract

The stacking of layers in transition-metal dichalcogenides in the temperature range of about 40 K to 600 K has been studied by convergent beam electron microscopy. Results on the stacking order and crystal symmetry in the charge density wave (CDW) states of pure and doped 1T and 4Hb polytypes are presented. We have succeeded in imaging the CDW domains in these materials. We also report the formation of CDWs in 6R-TaSe 2 and 4Hb-Nb 0.87 V 0.13 Se 2 .

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