Abstract
An atomic force microscope (AFM) was used to study anomalies in the titanium disilicide formation of narrow (0.26 μm) poly lines at the edge of n+ and p+ implant masks; a special test structure was designed both for morphological and electrical evaluations. On poly lines along the borders of the n+ mask, before titanium deposition, the AFM was able to detect some material build-up exactly on the locations where the silicide is severely reduced in thickness or interrupted, as inferred by electrical data and SEM analysis on finished samples. A carbon (or nitrogen) atom knock-on during the arsenic implant was invoked to explain the observed local hindering of the silicide formation.
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