Abstract
In this work, we discuss the state-of-the-art of different types of AlGaN-based ultraviolet photodetectors, including metal–semiconductor–metal photodetectors, Schottky barrier photodiodes and p–i–n structures. New metal–insulator–semiconductor photodiodes will be proposed as low-noise UV photodetectors, improving the detectivity by more than one order of magnitude in comparison with standard Schottky photodiodes, and with a higher fabrication yield than metal–semiconductor–metal photodiodes.
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