Abstract
This study evaluated the characteristics of graphene/AlGaN Schottky barrier photodiodes using graphene as a transparent electrode film and AlGaN as a light-absorbing sensor layer. It was found that the Schottky barrier height of graphene/AlGaN ranged within 1.2–1.7 eV depending on the Al composition ratio. By forming an array of photodiodes, an 8 × 8 pixels ultraviolet image sensor was fabricated.
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