Application and Analysis of Modified Metal-Oxide Memristor Models in Electronic Devices

Abstract

The design of memristor-based electronic circuits and devices gives researchers opportunities for the engineering of CMOS-memristor-based electronic integrated chips with ultra-high density and various applications. Metal-oxide memristors have good compatibility with the present CMOS integrated circuits technologies. The analysis of new electronic circuits requires suitable software and fast-functioning models. The main purpose of this paper is to propose the application of several modified, simplified, and improved metal-oxide memristor models in electronic devices and provide a comparison of their behavior, basic characteristics, and properties. According to this, LTSPICE is utilized in this paper because it is a free software product with good convergence. Several memristor-based electronic circuits, such as non-volatile passive and hybrid memory crossbars, a neural network, and different reconfigurable devices–filters, an amplifier, and a generator are analyzed in the LTSPICE environment, applying several standards and modified metal-oxide memristor models. After a comparison of the operation of the considered schemes, the main advantages of the modified metal-oxide memristor models, according to their standard analogs, are expressed, including fast operation, good accuracy, respectable convergence, switching properties, and successful applicability in complex electronic circuits.