Applicability of single-chip dual-gate bidirectional IGBTs in matrix converters

Abstract

This paper investigates the applicability and commutation strategy of a new monolithic dual-gate bidirectional IGBT (BD-IGBT) in matrix converters. Physics-based device model of the BD-IGBT is first developed and experimentally validated. Operation modes and power losses of the new BD-IGBT using an adapted four-step commutation control strategy are analyzed with mixed-mode device/circuit simulation. A new two-level gate control approach is proposed to maximize the benefit of the BD-IGBT with a considerably reduced conduction loss. The power loss, efficiency, and component cost of a 13 kW three-phase to three-phase matrix converter are compared between the conventional IGBT/diode combo switch and the new single-chip BD-IGBT implementations. It is found that the BD-IGBT implementation exhibits significant advantages over the conventional IGBT/diode cell in efficiency and cost in same matrix converter.