Characterization and Performance Evaluation of the Superjunction RB-IGBT in Matrix Converter

Abstract

In this paper, we investigate the performance of the three-phase ac–ac matrix converter (MC) utilizing the novel superjunction (SJ) reverse-blocking (RB)-insulated gate bipolar transistor (IGBT) as switch elements for the first time. The SJ RB-IGBT offers bidirectional blocking capability >1200 V by introducing a shorted-collector trench and n2-layer. The SJ RB-IGBT exhibits bipolar conducting mode in the on-state and the unipolar mode during turn-off. Therefore, both a low on-state voltage ( V on) and a low turnoff energy loss ( E off) can be obtained. The SJ RB-IGBT delivers the E off 80% lower than state-of-the-art RB-IGBTs without penalty in the V on. These merits make the SJ RB-IGBT an attractive candidate for the MC. To address the short circuit arising in commutation of the MC, the split gate is adopted for a low Miller capacitance. The power loss, efficiency, and loss distribution of the three-phase MC with the SJ RB-IGBT and other RB-IGBTs are compared by simulation and calculation. Compared with the MC using conventional nonpunch-through RB-IGBT, the MC with SJ RB-IGBT achieves 85%, 87%, and 56% reductions in the turnoff, reverse recovery, and conduction losses, respectively, yielding 56% reduction in the total loss. The low-power loss and superior dynamic performance of the SJ RB-IGBT enables the MC to operate at higher frequency and higher power density.