Abstract
An apparatus is described for measuring Seebeck coefficients in semiconducting thin-film samples with resistances as high as 1011 Ω. A temperature gradient ΔT is produced across the sample by means of differential optical heating of the ends of the sample. The Seebeck voltage ΔV is measured using a specially designed amplifier circuit with an input impedance of 1013 Ω. The Seebeck coefficient is obtained from the slope of the plot of ΔV vs ΔT.
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