Abstract
This paper describes the mechanical properties of poly (Polycrystalline) 3C-SiC thin films with <TEX>$N_2$</TEX> in-situ doping. In this work, the poly 3C-SiC film was deposited by APCVD (Atmospheric Pressure Chemical Vapor Deposition) method using single-precursor HMDS (Hexamethyildisilane: <TEX>$Si_2(CH_3)_6)$</TEX> at <TEX>$1200^{\circ}C$</TEX>. The mechanical properties of doped poly 3C-SiC thin films were measured by nono-indentation according to the various <TEX>$N_2$</TEX> flow rate. In the case of 0 sccm <TEX>$N_2$</TEX> flow rate, Young's Modulus and hardness were obtained as 285 GPa and 35 GPa, respectively. Young's Modulus and hardness were decreased according to increase of <TEX>$N_2$</TEX> flow rate. The crystallinity and surface roughness was also measured by XRD (X-Ray Diffraction) and AFM (Atomic Force Microscopy), respectively.
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