Abstract
We have investigated the deposition of silicon films on SiO2 patterned Si(111) substrates by atmospheric pressure chemical vapor deposition (APCVD) under standard condition. Oxidized silicon wafers with different sizes of circular and striated patterns were used as substrates for deposition of 35 μm silicon films. The influence of surface morphologies of substrates on epitaxial Si films has been discussed. The crystalline structures of the epitaxial Si films rely on the prepatterned substrates. Triangular prism-shaped grains have been obtained after depositing silicon film on substrates with circular patterns. While different size polycrystalline silicon grains appear on surfaces of Si films grown on SiO2 regions of substrates along the axis of striated patterns. Twins defects were observed in epitaxial Si films grown on SiO2 layers of the pretreated substrates.
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