Abstract
We treat the problem of impurity scattering in a semiconductor having multivalley conduction band structure. A unified treatment has been given suited for the bound states and the scattering states. This goes beyond the “effective mass” theory of low-lying bound states to include intervalley transitions, and conforms with Friedel's sum rule for scattering as adapted for semiconductors.As an illustration of these new results, an expression for the neutral impurity mobility has been obtained and compared with earlier formulas.
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