Abstract
AbstractA discussion of the basic models for the calculation of the relaxation time for scattering on neutral impurities is given. A comparison is made between the experimental results of scattering of electrons on neutral oxygen atoms in n‐Si and the theoretical data obtained on the basis of three models. It is shown that an S‐partial wave approximation with a phase shift linear in the momentum, taking into account Friedel's sum rules and the many‐channel scattering in many‐valley semi‐conductors, gives a good agreement with experimental results for impurity concentrations from 1013 to 1017 cm−3 in the temperature interval 77 to 300 K.
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