Abstract
DI center, as a widely existed defect in 4H‐SiC, has attracted much attention in recent years, while the origin of it is still unclear. Herein, by comparing first‐principles calculated potential point defects‐related zero‐phonon lines (ZPLs) and nonradiative capture cross‐sections with the DI center‐related values in the experiment, it is proposed that the transition from the bound exciton states about 57 meV below the CBM to the “+1/+2” level of antisite defect SiC is responsible for the DI center in 4H‐SiC. This work describes the temperature and transition energy level dependence of the hole capture cross‐section of antisite defect in 4H‐SiC, which provides an idea for the optimal design of point defects in semiconductor materials.
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