Abstract
Surface antireflection structure is important for high-efficiency silicon solar cells by improving the light trapping. This paper demonstrated the effect of the surface SiO2 thin film on the antireflection properties of the pyramidal textured monocrystalline silicon wafer. The pyramidal texture was etched by the mixture solution of Na2SiO3 and Na3PO4, and the SiO2 film was generated by thermal oxidation. After the pyramidal texture was produced on the polished silicon wafer the average reflectance within the wavelength range of 400–900nm reduced from 30% to 15.6%, while it could be lowered further by surface SiO2 thin film. After oxidized in oxygen at 1000°C for 30min, the sample with 111.9nm-thicked SiO2 film exhibited an average reflectance of 3.8% in the visible spectrum.
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