Abstract
Abstract : Fundamental research issues and novel designs of Sb-based superlattice photodetectors are reported. These include the following: Accomplishment 1. Growth of new InAs/GaSb type-II superlattice material using MOCVD. We report the improved SL quality based on different interfacial layers (IF) and detector results using new growth schemes. Accomplishment 2. Demonstration of the first MOCVD grown InAs/GaSb type-II superlattice photodiodes. We have characterized the photodiodes' I-V curve, responsivity, and detectivity with improved performance. Accomplishment 3. Realization of the first InAs/InAsSb type-II superlattice structure grown by MOCVD. We have measured the structure's absorption spectra.
Published Version
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