Abstract
Room temperature current density versus voltage characteristics of silicon Esaki diodes grown with molecular beam epitaxy are presented. The diodes are doped with boron and antimony. The integrated devices are realized without a post growth annealing step. Good peak to valley current ratios in excess of 3 and excellent peak current densities up to 5.2 kA/cm 2 were found at room temperature. We present a detailed investigation of the influence on the boron surface segregation effects of the peak current density.
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