Abstract
Antimonide-based p+N junctions have been grown by molecular beam epitaxy and processed into diodes. The diodes have good rectification with ideality factors near 1, and high saturation current densities of 2.5×10−2A∕cm2. S-parameter measurements to 50GHz indicate a 1Ω series resistance and a capacitance of 1.2fF∕μm2 for a 5μm diameter mesa diode. A cutoff frequency of 6.5THz is estimated from the RC product. The high saturation current indicates that this diode will reach forward bias currents at substantially lower voltages than GaAs Schottky diodes. These properties suggest using the diode as a terahertz mixer.
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